Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N5089 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 211 K |
2N5089 | 350mW NPN silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 191 K |
2N5089 | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 281 K |
2N5089 | Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 80 K |
2N5089RLRA | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 281 K |
2N5089RLRE | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 281 K |
H2N5089 | 50mA NPN epitaxial planar transistor | distributor | - | 3 | - | - | 35 K |
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