| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5209 | 350mW NPN silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 146 K |
| 2N5209RLRE | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 277 K |
| 2N5210 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 77 K |
| 2N5210 | 350mW NPN silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 146 K |
| 2N5210 | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 45 K |
| 2N5210RLRA | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 277 K |
| 2N5225 | 350mW NPN silicon transistor | distributor | - | 3 | -55°C | 150°C | 41 K |
| 2N5232 | 330mW NPN silicon transistor | distributor | - | 3 | -55°C | 150°C | 55 K |
| 2N5249 | 330mW NPN silicon transistor | distributor | - | 3 | -55°C | 150°C | 43 K |
| 2N5294 | Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. | distributor | - | 3 | -65°C | 150°C | 46 K |
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