| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5401 | 150 V, PNP silicon amplifier transistor | distributor | - | 3 | -55°C | 150°C | 144 K |
| 2N5401 | 1W PNP complementary silicon general purpose high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
| 2N5401 | PNP high-voltage transistor. | Philips-Semiconductors | - | 3 | -65°C | 150°C | 47 K |
| 2N5401 | Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 76 K |
| 2N5401S | PNP transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 147 K |
| H2N5401 | 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage | distributor | - | 3 | - | - | 38 K |
| HN/2N5401 | 150 V, PNP silicon expitaxial planar transistor | distributor | - | 3 | - | - | 124 K |
| PJ2N5401CT | 130V; 600mA PNP epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 191 K |
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