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2N5550

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N5550 NPN Epitaxial Silicon TransistorFairchild-Semiconductor----28 K
2N5550NPN transistor for general purpose and high voltage applicationsKorea-Electronics-Co--Ltd--3-55°C150°C147 K
2N55501W NPN complementary silicon general purpose high voltage transistordistributor-3-55°C150°C165 K
2N5550NPN high-voltage transistorsPhilips-SemiconductorsSOT54---43 K
2N5550Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C34 K
2N5550RLRAAmplifier Transistor NPNON-Semiconductor-3--188 K
2N5550RLRPAmplifier Transistor NPNON-Semiconductor-3--188 K
2N5550SNPN transistor for general purpose and high voltage applicationsKorea-Electronics-Co--Ltd--3-55°C150°C152 K
HN/2N5550140 V, NPN silicon expitaxial planar transistordistributor-3--131 K
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