Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
2N5550 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 28 K |
2N5550 | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 147 K |
2N5550 | 1W NPN complementary silicon general purpose high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
2N5550 | NPN high-voltage transistors | Philips-Semiconductors | SOT54 | - | - | - | 43 K |
2N5550 | Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 34 K |
2N5550RLRA | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 188 K |
2N5550RLRP | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 188 K |
2N5550S | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 152 K |
HN/2N5550 | 140 V, NPN silicon expitaxial planar transistor | distributor | - | 3 | - | - | 131 K |
1 |
---|