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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N5551150 V, NPN epitaxial planar selicon high voltage transistordistributor-3-55°C150°C57 K
2N55511W NPN complementary silicon general purpose high voltage transistordistributor-3-55°C150°C165 K
2N5551NPN high-voltage transistor.Philips-Semiconductors-3-65°C150°C55 K
2N5551NPN high-voltage transistor.Philips-SemiconductorsSOT543-65°C150°C55 K
2N5551Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C75 K
H2N5551600mA NPN epitaxial planar transistordistributor-3--37 K
HN/2N5551160 V, NPN silicon expitaxial planar transistordistributor-3--131 K
PJ2N5551CT180V; 600mA NPN epitaxial silicon transistordistributor-3-20°C85°C190 K
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