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2N60

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N6036COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSSGS-Thomson-Microelectronics----87 K
2N6039COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSSGS-Thomson-Microelectronics----87 K
2N6040Plastic Medium-Power Complementary Silicon TransistorsON-Semiconductor-3--174 K
2N6058Darlington Complementary Silicon Power TransistorsON-Semiconductor----190 K
2N6059Darlington Complementary Silicon Power TransistorsON-Semiconductor----190 K
2N6059COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSSGS-Thomson-Microelectronics----64 K
HGTG12N60D1D12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast DiodeIntersil-Corporation----36 K
HGTG32N60E232A, 600V N-Channel IGBTIntersil-Corporation----33 K
STP2N60N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----199 K
STP2N60FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----199 K
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