| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6428 | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 46 K |
| 2N6428A | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 46 K |
| 2N6439 | 60 W,NPN silicon RF power transistor | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 137 K |
| 2N6449 | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 91 K |
| 2N6450 | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 91 K |
| 2N6451 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 93 K |
| 2N6452 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 93 K |
| 2N6453 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 93 K |
| 2N6454 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 93 K |
| H2N6426 | 500mA NPN epitaxial planar transistor | distributor | - | 3 | - | - | 35 K |
| [1] [2] [3] [4] [5] 6 [7] |
|---|
