| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HUF75332S3S | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs | Intersil-Corporation | - | - | - | - | 210 K |
| HUF75542S3S | 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs | Intersil-Corporation | - | - | - | - | 166 K |
| HUF76132S3S | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | Intersil-Corporation | - | - | - | - | 110 K |
| HUF76432S3S | 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 133 K |
| MA2S304 | Silicon epitaxial planer type variable capacitance diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 38 K |
| MA2S331 | Silicon epitaxial planer type variable capacitance diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 39 K |
| MA2S357 | Silicon epitaxial planer type variable capacitance diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 39 K |
| MA2S367 | Silicon epitaxial planer type variable capacitance diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 34 K |
| MA2S372 | Silicon epitaxial planer type variable capacitance diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 39 K |
| MA2S374 | Silicon epitaxial planer type variable capacitance diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 39 K |
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