| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA608N | Low-frequency general purpose amplifier applications | SANYO-Electric-Co--Ltd- | - | 3 | - | - | 40 K |
| 2SA642 | Low frequency power amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. | distributor | - | 3 | 0°C | 150°C | 82 K |
| 2SA643 | Low frequency power amplifier. Collector-base voltage: Vcbo = -40V. Collector-emitter voltage: Vceo = -20V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. | distributor | - | 3 | 0°C | 150°C | 82 K |
| 2SA671 | PNP epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
| 2SA673 | Small signal general purpose transistor | distributor | - | - | - | - | 31 K |
| 2SA673 | 400mW PNP silicon transistor | distributor | ECB | 3 | -55°C | 150°C | 63 K |
| 2SA673A | Small signal general purpose transistor | distributor | - | - | - | - | 31 K |
| 2SA673A | 400mW PNP silicon transistor | distributor | - | 3 | -55°C | 150°C | 67 K |
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