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2SC10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SC1008Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA.distributor-30°C150°C73 K
2SC1009High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA.distributor-30°C150°C72 K
2SC1009A-LSilicon transistorNEC-Electronics-Inc-----325 K
2SC1009A-T1BSilicon transistorNEC-Electronics-Inc-----325 K
2SC1009A-T2BSilicon transistorNEC-Electronics-Inc-----325 K
2SC1047Silicon NPN epitaxial planer type small signal transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----56 K
2SC1047Silicon epitaxial planar transistor. High power, primarily for use in audio and general purposeWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--80 K
2SC1050Silicon epitaxial planar transistor. NPN high frequency, high power, primarily for use in audio and general purposeWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--188 K
2SC10613Ampere NPN silicon power transistordistributor-3-55°C150°C110 K
2SC1061NPN epitaxial silicon transistor. Low frequence power amplifierWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--69 K
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