| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC2001 | Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 700mA. | distributor | - | 3 | 0°C | 150°C | 45 K |
| 2SC2023 | Transistor For General Purpose | Sanken-Electric-Co- | - | - | - | - | 23 K |
| 2SC2053 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 123 K |
| 2SC2055 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 122 K |
| 2SC2056 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 179 K |
| 2SC2073 | 4,5Ampere NPN silicon power transistor | distributor | - | 3 | -55°C | 150°C | 114 K |
| 2SC2078 | NPN epitaxial planar silicon transistor, 27 MHz RF power amp application | SANYO-Electric-Co--Ltd- | 2010B | 3 | - | - | 86 K |
| 2SC2086 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 126 K |
| 2SC2094 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | - | - | 149 K |
| 2SC2097 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | - | - | 134 K |
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