| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK2034 | Silicon N channel field effect transistor for high speed switching applications and analog switch applications | Toshiba | - | 3 | -55°C | 150°C | 195 K |
| 2SK2035 | Silicon N channel field effect transistor for high speed switching applications and analog switch applications | Toshiba | - | 3 | -55°C | 150°C | 195 K |
| 2SK2036 | Silicon N channel field effect transistor for high speed switching applications and analog switch applications | Toshiba | - | 3 | -55°C | 150°C | 197 K |
| 2SK2312 | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications | Toshiba | - | 3 | -55°C | 150°C | 288 K |
| 2SK2312 | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications | Toshiba | - | 3 | -55°C | 150°C | 288 K |
| 2SK2313 | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications | Toshiba | - | 3 | -55°C | 150°C | 292 K |
| 2SK2314 | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications | Toshiba | - | 3 | -55°C | 150°C | 291 K |
| 2SK2493 | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, and DC-DC converter applications | Toshiba | - | 3 | -55°C | 150°C | 260 K |
| 2SK2496 | Silicon N channel field effect transistor for SHF band low noise amplifier applications | Toshiba | - | 4 | -55°C | 125°C | 317 K |
| 2SK2496 | Silicon N channel field effect transistor for SHF band low noise amplifier applications | Toshiba | - | 4 | -55°C | 125°C | 317 K |
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