| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2W01 | 100V, 2.0A bridge rectifier | distributor | - | 4 | -55°C | 125°C | 46 K |
| 2W01 | 100V, 2.0A bridge rectifier | distributor | - | 4 | -55°C | 125°C | 46 K |
| 2W01G | 2 amp glass passivated single-phasebridge rectifier | distributor | Molded plastic | 4 | -55°C | 150°C | 729 K |
| 2W01G | 2.0 Ampere Glass Passivated Bridge Rectifiers | Fairchild-Semiconductor | - | - | - | - | 30 K |
| 2W01G | Glass Passivated Single-phase Bridge Rectifier | General-Semiconductor | WOG | - | - | - | 123 K |
| 2W01G | 100 V, 2.0 A sintered glass passivated bridge rectifier | distributor | WOB | 4 | -65°C | 150°C | 47 K |
| 2W01G | 100 V, 2.0 A sintered glass passivated bridge rectifier | distributor | WOB | 4 | -65°C | 150°C | 47 K |
| GP2W0104YP | 115 kbps transceiver | Sharp | Epoxy resin | 6 | -20°C | 85°C | 99 K |
| GP2W0106YP | 115 kbps transceiver | Sharp | Epoxy resin | 8 | -20°C | 85°C | 107 K |
| LNA2W01L | GaAs Infrared Light Emitting Diodes | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 44 K |
| PNA2W01M | Darlington Phototransistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 38 K |
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