| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DE375-102N10A | RF power MOSFET | distributor | - | 6 | -55°C | 150°C | 78 K |
| IXFH12N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 232 K |
| IXFM12N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 232 K |
| IXFM12N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 232 K |
| IXTH12N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 106 K |
| IXTM12N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 106 K |
| MTP12N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 170°C | 239 K |
| R3112N10A-TR | Low voltage detector with output delay. Output voltage 1.0V. Output type Nch open drain. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 267 K |
| R3112N10C-TR | Low voltage detector with output delay. Output voltage 1.0V. Output type CMOS. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 267 K |
| RFP2N10 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
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