| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQD2N100 | 1000V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 622 K |
| IXFH12N100F | 1000V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 99 K |
| IXFT12N100F | 1000V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 99 K |
| PHP12N10E | 100 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 57 K |
| PNP12N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 72 K |
| PNP12N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 72 K |
| RFP22N10 | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 367 K |
| RFP2N10L | 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | -- |
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