| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N2060A | 80V Vce, 0.5A Ic, 60MHz PNP bipolar transistor | Semelab-Plc- | TO77 | - | - | - | 19 K |
| ICS9155-02N20 | Low-cost 20-pin frequency generator | distributor | DIP | 20 | 0°C | 70°C | 387 K |
| MTV32N20E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 264 K |
| MTW32N20E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 205 K |
| NM27C512N200 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 105 K |
| R1112N20A-TR | Low noise 150mA LDO regulator. Output voltage 2.0V. Active low type. Standard taping type TR | distributor | - | 5 | -40°C | 85°C | 244 K |
| RFM12N20 | 12.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 35 K |
| RFP12N20 | 12.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 35 K |
| RFP2N20 | 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 40 K |
| RFP2N20L | 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 35 K |
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