| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5087 | 50 V, PNP general purpose transistor | Philips-Semiconductors | - | 3 | -65°C | 150°C | 49 K |
| 2N5088 | 35 V, NPN general purpose transistor | Philips-Semiconductors | - | 3 | -65°C | 150°C | 49 K |
| MK45H02N50 | Very fast CMOS 1K x 9 BiPORT FIFO, 50ns | SGS-Thomson-Microelectronics | PSDIP | 28 | 0°C | 70°C | 696 K |
| MK45H02N50 | Very fast CMOS 1K x 9 BiPORT FIFO, 50ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 696 K |
| MK45H12N50 | Very fast CMOS 1K x 9 BiPORT FIFO, 50ns | SGS-Thomson-Microelectronics | PSDIP | 28 | 0°C | 70°C | 696 K |
| MK45H12N50 | Very fast CMOS 1K x 9 BiPORT FIFO, 50ns | SGS-Thomson-Microelectronics | PDIP | 28 | 0°C | 70°C | 696 K |
| PHB2N50 | 500 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 59 K |
| PHP2N50 | 500 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 56 K |
| PHU2N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
| PHX2N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
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