Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N5087 | PNP General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 58 K |
2N5087 | 350mW PNP silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 191 K |
2N5087 | Amplifier transistor | Motorola | - | 2 | -55°C | 150°C | 300 K |
2N5087 | Amplifier Transistor PNP | ON-Semiconductor | - | 3 | - | - | 300 K |
2N5087 | 50 V, PNP general purpose transistor | Philips-Semiconductors | - | 3 | -65°C | 150°C | 49 K |
2N5087 | Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. | distributor | - | 3 | 0°C | 150°C | 76 K |
2N5087RLRA | Amplifier Transistor PNP | ON-Semiconductor | - | 3 | - | - | 300 K |
H2N5087 | 50mA PNP epitaxial planar transistor for low noise, high gain, general purpose amplifier applications | distributor | - | 3 | - | - | 39 K |
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