| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5550 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 28 K |
| 2N5550 | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 147 K |
| 2N5550 | 1W NPN complementary silicon general purpose high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
| 2N5550S | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 152 K |
| 2N5551 | 150 V, NPN epitaxial planar selicon high voltage transistor | distributor | - | 3 | -55°C | 150°C | 57 K |
| 2N5551 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 500 K |
| 2N5551 | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 146 K |
| 2N5551C | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 164 K |
| 2N5551S | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 150 K |
| 2N5555 | JFET switching | Motorola | - | 3 | -65°C | 135°C | 271 K |
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