| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5550 | Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 34 K |
| 2N5551 | 1W NPN complementary silicon general purpose high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
| 2N5551 | NPN high-voltage transistor. | Philips-Semiconductors | - | 3 | -65°C | 150°C | 55 K |
| 2N5551 | NPN high-voltage transistor. | Philips-Semiconductors | SOT54 | 3 | -65°C | 150°C | 55 K |
| 2N5551 | Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 75 K |
| H2N5551 | 600mA NPN epitaxial planar transistor | distributor | - | 3 | - | - | 37 K |
| HN/2N5550 | 140 V, NPN silicon expitaxial planar transistor | distributor | - | 3 | - | - | 131 K |
| HN/2N5551 | 160 V, NPN silicon expitaxial planar transistor | distributor | - | 3 | - | - | 131 K |
| PJ2N5551CT | 180V; 600mA NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 190 K |
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