Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N5880 | 80 V, complementary PNP selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 186 K |
2N5880 | Complementary silicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 180 K |
2N5881 | Complementary silicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 180 K |
2N5882 | 80 V, complementary NPN selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 186 K |
2N5882 | Complementary silicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 180 K |
2N5883 | Complementary silicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 183 K |
2N5884 | Complementary silicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 183 K |
2N5885 | Complementary silicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 183 K |
2N5886 | Complementary silicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 183 K |
2N5886 | COMPLEMENTARY SILICON HIGH POWER TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 41 K |
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