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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N6038NPN medium power darlington transistor, 4A , 60VSGS-Thomson-Microelectronics-3-65°C150°C174 K
2N6071ABidirectional thyristor, 4 Ampere, 200VON-Semiconductor-3-40°C110°C119 K
2N6071BBidirectional thyristor, 4 Ampere, 200VON-Semiconductor-3-40°C110°C119 K
2N6073ABidirectional thyristor, 4 Ampere, 400VON-Semiconductor-3-40°C110°C119 K
2N6073BBidirectional thyristor, 4 Ampere, 400VON-Semiconductor-3-40°C110°C119 K
PHB2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C76 K
PHD2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C76 K
PHP2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C76 K
PHX2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C65 K
PHX2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C65 K
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