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2n60E

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTA32N60E232A, 600V N-Channel IGBTIntersil-Corporation----31 K
HGTG32N60E232A, 600V N-Channel IGBTIntersil-Corporation----33 K
MTB2N60ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C271 K
MTP2N60ETMOS E-FET power field effect transistorMotorola-4-55°C150°C219 K
PHB2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C76 K
PHD2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C76 K
PHP2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C76 K
PHP2N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsTO220AB3-55°C150°C94 K
PHX2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C65 K
PHX2N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C65 K
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