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2n610

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N610680 V, epitaxial-base PNP selicon versawatt transistordistributor-3-65°C150°C101 K
2N610780 V, epitaxial-base PNP selicon versawatt transistordistributor-3-65°C150°C101 K
2N6107Complementary silicon plastic power transistordistributor-3-65°C150°C171 K
2N6107Complementary Silicon Plastic Power TransistorsON-Semiconductor-3--149 K
2N6107SILICON PNP SWITCHING TRANSISTORSSGS-Thomson-Microelectronics----69 K
2N6107PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W.distributor-3-65°C150°C47 K
2N610860 V, epitaxial-base PNP selicon versawatt transistordistributor-3-65°C150°C101 K
2N610960 V, epitaxial-base PNP selicon versawatt transistordistributor-3-65°C150°C101 K
2N6109Complementary silicon plastic power transistordistributor-3-65°C150°C171 K
2N6109Complementary Silicon Plastic Power TransistorsON-Semiconductor-3--149 K
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