| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6796 | 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 140 K |
| 2N6796 | N-channel enhancement mode MOSFET power transistor | distributor | - | 3 | -55°C | 125°C | 64 K |
| 2N6796 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO39 | - | - | - | 18 K |
| 2N6796LCC4 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | LCC4 | - | - | - | 19 K |
| JANTX2N6796 | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 236 K |
| JANTX2N6796 | N-channel enhancement mode MOSFET power transistor | distributor | - | 3 | -55°C | 125°C | 64 K |
| JANTXV2N6796 | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 236 K |
| JANTXV2N6796 | N-channel enhancement mode MOSFET power transistor | distributor | - | 3 | -55°C | 125°C | 64 K |
| 1 |
|---|
