| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FM27C512N90 | 512K-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 100 K |
| IXFH12N90 | 900V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 85 K |
| IXFH12N90Q | 900V HiPerFET power MOSFET Q-class | distributor | - | 3 | -40°C | 85°C | 54 K |
| IXFM12N90 | 900V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 85 K |
| IXFT12N90Q | 900V HiPerFET power MOSFET Q-class | distributor | - | 3 | -40°C | 85°C | 54 K |
| IXGH12N90C | 900V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 34 K |
| IXTH12N90 | 900V MegaMOS FET | distributor | - | 3 | -55°C | 150°C | 102 K |
| IXTM12N90 | 900V MegaMOS FET | distributor | - | 4 | -55°C | 150°C | 102 K |
| NM27C512N90 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 105 K |
| PJ2N9012CT | 40V; 500mA PNP epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 199 K |
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