| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC1008 | Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. | distributor | - | 3 | 0°C | 150°C | 73 K |
| 2SC1009 | High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. | distributor | - | 3 | 0°C | 150°C | 72 K |
| 2SC1009A-L | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 325 K |
| 2SC1009A-T1B | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 325 K |
| 2SC1009A-T2B | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 325 K |
| 2SC1047 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 56 K |
| 2SC1047 | Silicon epitaxial planar transistor. High power, primarily for use in audio and general purpose | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 80 K |
| 2SC1050 | Silicon epitaxial planar transistor. NPN high frequency, high power, primarily for use in audio and general purpose | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 188 K |
| 2SC1061 | 3Ampere NPN silicon power transistor | distributor | - | 3 | -55°C | 150°C | 110 K |
| 2SC1061 | NPN epitaxial silicon transistor. Low frequence power amplifier | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
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