Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SD5041 | Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. | distributor | - | 3 | 0°C | 150°C | 85 K |
2SD525 | NPN epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
2SD526 | 4Ampere NPN silicon power transistor | distributor | - | 3 | -55°C | 150°C | 118 K |
2SD526 | NPN epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
2SD560 | NPN darlington transistor for low-frequency power amplifiers and low-speed switching, 5A, 100V | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 90 K |
2SD592A | 750mW NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 89 K |
2SD596-L | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 249 K |
2SD596-T1B | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 249 K |
2SD596-T2B | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 249 K |
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