| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AIC1730-28CQ | Low noise low dropout, 150mA linear regulator | distributor | - | 6 | 0°C | 70°C | 222 K |
| AIC1730-28CV | Low noise low dropout, 150mA linear regulator | distributor | - | 6 | 0°C | 70°C | 222 K |
| E30-28 | Input voltage 18-36 VDC;output voltage 5/+/-15 VDC;output current:3500/+/-250 mA;input current 30 mA/1320 mA; 25-30 W DC to DC converter | distributor | - | 4 | -25°C | 71°C | 60 K |
| HF30-28F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| HF30-28S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| MA4ST230-287 | 12V, 50 mA, low-voltage/high Q SI hyperabrupt varactor | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | -- |
| MA4ST330-287 | Low-voltage/wide band SI hyperabrupt varactor | M-A-COM---manufacturer-of-RF | SOT | 3 | - | - | 69 K |
| UFT30-28 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 19 K |
| UFT30-28S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
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