| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ARA3000S23 | Telephony reverse amplifier with step attenuator | Anadigics-Inc- | SSOP | 28 | -40°C | 85°C | 175 K |
| ASI3000 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| FG3000DV-90DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 72 K |
| FG3000GX-90DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 52 K |
| FGR3000FX-90DA | Reverse-condition GTO thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 82 K |
| MJ3000 | Medium-power complementary silicon transistor | Motorola | - | 3 | -55°C | 200°C | 132 K |
| MMBD3000LT1 | Switching diode | Motorola | - | 3 | -55°C | 150°C | 171 K |
| R3000 | 0.5 mA high voltage silicon rectifier | distributor | - | 2 | -65°C | 175°C | 330 K |
| R3000F | 0.5 mA high voltage fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 410 K |
| TDM30008 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | SEE_FACTORY | - | - | - | 120 K |
| TDM30008 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | SEE_FACTORY | - | - | - | 120 K |
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