Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CM300DU-12F | 300A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 74 K |
CM300DU-24F | 300A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 73 K |
PM300DSA060 | 300 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 64 K |
PM300DSA060 | 300Amp - intelligent power modules | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | - | - | 925 K |
PM300DSA120 | 300 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 62 K |
PM300DVA120 | 300 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 58 K |
QM300DY-24 | 300A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 82 K |
QM300DY-24B | 300A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 85 K |
QM300DY-2H | 300A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 82 K |
QM300DY-2HB | 300A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 9 | -40°C | 150°C | 85 K |
[1] 2 [3] [4] [5] [6] [7] |
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