| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3055 | NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | distributor | - | 3 | -65°C | 200°C | 48 K |
| 2N3055 | High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. | distributor | - | 3 | -65°C | 200°C | 48 K |
| 2N3055H | NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | distributor | - | 3 | -65°C | 200°C | 48 K |
| DT3055L | 60V; N-channel enchancement mode field effect transistor | distributor | - | 4 | -65°C | 150°C | 73 K |
| EM83055H | Keyboard encoder | ELAN-Microelectronics-Corp- | - | 39 | 0°C | 70°C | 197 K |
| MJE3055T | NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. | distributor | - | 3 | -65°C | 150°C | 48 K |
| P3055LD | 25V; 12A N-channel logic level enhancement mode field effect transistor | distributor | SOP | 3 | -55°C | 150°C | 214 K |
| P3055LL | 25V; 6A N-channel logic level enhancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 217 K |
| P3055LL | 25V; 12A N-channel logic level enhancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 215 K |
| TIP3055 | NPN, silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 90W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
|---|
