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3055e

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MMFT3055EMedium power field effect transistorMotorola-4-65°C150°C238 K
MMFT3055ELMedium power field effect transistorMotorola-4-65°C150°C236 K
MTD3055ELN-channel enhancement-mode silicon gate, 10A, 80VMotorola-3-65°C150°C380 K
MTD3055EL1N-channel enhancement-mode silicon gate, 10A, 80VMotorola-3-65°C150°C380 K
MTP3055EN-CHANNEL 60V - 0.1 OHM - 12A TO-220 STRIPFET POWER MOSFETSGS-Thomson-Microelectronics----81 K
PHD3055E55 V, N-channel trenchMOS transistorPhilips-SemiconductorsSOT3-55°C175°C103 K
PHP3055E55 V, N-channel trenchMOS transistorPhilips-SemiconductorsSOT3-55°C175°C103 K
PHX3055E55 V, N-channel trenchMOS transistorPhilips-SemiconductorsSOT3-55°C150°C96 K
PNP3055EPowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.Philips-SemiconductorsTO220AB3-55°C175°C65 K
RK3055EN-channel MOSFET, small switching (60V/8A)ROHMCPT33--135 K
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