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30N06

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQB30N0660V N-Channel MOSFETFairchild-Semiconductor----663 K
FQB30N06L60V LOGIC N-Channel MOSFETFairchild-Semiconductor----630 K
MTB30N06VLTMOS V power field effect transistorMotorolaDPAK4-55°C175°C262 K
MTP30N06VLTMOS V power field effect transistorMotorola-4-55°C175°C207 K
RF1S30N06LETRANSISTOR MOSFETFairchild-Semiconductor----91 K
RF1S30N06LESM30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----80 K
RF1S30N06LESM30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----80 K
RFP30N06LE30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----80 K
STP30N06N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----206 K
STP30N06FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----206 K
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