Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXDH30N120 | 1200V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 86 K |
IXDH30N120D1 | 1200V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 86 K |
IXDR30N120 | 1200V high voltage IGBT with optional diode | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 69 K |
IXDR30N120D1 | 1200V high voltage IGBT with optional diode | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 69 K |
IXDT30N120 | 1200V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 86 K |
IXDT30N120D1 | 1200V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 86 K |
IXFN230N10 | 100V HiPerFET power MOSFET single die MOSFET | distributor | - | 4 | -55°C | 150°C | 281 K |
VT30N1 | Photoconductive cell | distributor | - | 2 | -40°C | 75°C | 1 M |
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