| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQA30N40 | 400V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 732 K |
| IXFH30N40Q | 400V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 105 K |
| IXFT30N40Q | 400V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 105 K |
| IXTH30N45 | 450V MegaMOS FET | distributor | - | 3 | -55°C | 150°C | 37 K |
| R3130N47EC-TR | Low voltage detector with built-in delay circuit. Detector threshold 4.7V. Standardoutput delay time 240ms. Output type CMOS. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
| R3130N48EC-TR | Low voltage detector with built-in delay circuit. Detector threshold 4.8V. Standardoutput delay time 240ms. Output type CMOS. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
| VT30N4 | Photoconductive cell | distributor | - | 2 | -40°C | 75°C | 1 M |
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