| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTG30N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 92 K |
| HGTG30N60B3 | 60A, 600V, UFS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 105 K |
| HGTG30N60B3D | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 109 K |
| HGTG30N60C3 | 63A, 600V, UFS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 99 K |
| HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 116 K |
| IXGH30N60BU1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 141 K |
| IXSH30N60AU1 | 600V high speed IGBT with diode | distributor | - | 3 | -55°C | 150°C | 82 K |
| IXSH30N60U1 | 600V high speed IGBT with diode | distributor | - | 3 | -55°C | 150°C | 82 K |
| MGW30N60 | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 214 K |
| MGY30N60D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 254 K |
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