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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SC3101NPN epitaxial planar typeMitsubishi-Electric-Corporation-Semiconductor-Group-3--92 K
AT-31011-BLKLow current, high performance NPN silicon bipolar transistordistributor-4--137 K
AT-31011-TR1Low current, high performance NPN silicon bipolar transistordistributor-4--137 K
HCPL-3101Power MOSFET,IGBT gate drive optocouplerdistributor-8-25°C80°C233 K
LS-3101SThyratron. Peak anode voltage epy 35 kV, peak anode current ib 5000 a, average anode current lb 2 Adc, RMS anode current lb 45 Aac. Seated height x tube width 5.25 x 3 inches.distributor-4--49 K
MAP40-3101Input voltage range:85-264V, multiple output voltage , power supplierdistributor--0°C70°C152 K
MAP40-3101Input voltage: 85-264V, multiple output voltage, power supplierdistributor-60°C70°C133 K
NJU3101D4-bit single chip tiny controllerNew-Japan-Radio-Co--Ltd--JRCDIP16--758 K
NJU3101M4-bit single chip tiny controllerNew-Japan-Radio-Co--Ltd--JRCDMP16--758 K
TC54VN3101ECBTRVoltage detector, Nch output, 3.1V, +/-1%Microchip-Technology-Inc--3-40°C85°C215 K
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