Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N3110 | 800mW NPN silicon AF medium power transistor | distributor | - | 3 | -65°C | 200°C | 143 K |
3110 | 1000 V three phase bridge 2 A forward current, 3000 ns recovery time | distributor | - | 5 | -55°C | 150°C | 138 K |
3110F | 1000 V three phase bridge 2 A forward current, 150 ns recovery time | distributor | - | 5 | -55°C | 150°C | 138 K |
3110UF | 1000 V three phase bridge 2 A forward current, 70 ns recovery time | distributor | - | 5 | -55°C | 150°C | 138 K |
EM83110A | RF keyboard encoder | ELAN-Microelectronics-Corp- | PDIP | 28 | 0°C | 70°C | 167 K |
EM83110A | RF keyboard encoder | ELAN-Microelectronics-Corp- | SOP | 28 | 0°C | 70°C | 167 K |
RF3110 | Triple-band GSM/DCS/PCS power AMP module | RF-Micro-Devices-RFMD | - | 12 | -40°C | 85°C | 198 K |
RF3110PCBA | Triple-band GSM/DCS/PCS power AMP module | RF-Micro-Devices-RFMD | - | 12 | -40°C | 85°C | 198 K |
ZNBG3110Q20 | FET bias controller | Zetex-Semiconductor | QSOP | 20 | -40°C | 70°C | 657 K |
ZNBG3110Q20 | FET bias controller | Zetex-Semiconductor | QSOP | 20 | -40°C | 70°C | 657 K |
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