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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| BSM300GA170DN2E3166 | 1700V/440A IGBT power module | Infineon-formely-Siemens | SINGLE SWITCH 1 | 5 | - | - | 124 K |
| HYB3166160AT-40 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3166160AT-50 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3166160AT-60 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3166160ATL-50 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3166160ATL-60 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 216 K |
| HYB3166165AT-40 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 284 K |
| HYB3166165AT-50 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 284 K |
| HYB3166165AT-60 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 284 K |
| HYB3166165ATL-50 | 4M x 16bit DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 284 K |
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