| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| A62S6316G-55S | 55ns; operating current:40mA;standby current:30uA 64K x 16bit low voltage CMOS SRAM | distributor | BGA | 48 | 0°C | 70°C | 211 K |
| A62S6316G-55SI | 55ns; operating current:40mA;standby current:30uA 64K x 16bit low voltage CMOS SRAM | distributor | BGA | 48 | 0°C | 70°C | 211 K |
| A62S6316G-70S | 70ns; operating current:40mA;standby current:15uA 64K x 16bit low voltage CMOS SRAM | distributor | BGA | 48 | 0°C | 70°C | 211 K |
| A62S6316G-70SI | 70ns; operating current:40mA;standby current:30uA 64K x 16bit low voltage CMOS SRAM | distributor | BGA | 48 | 0°C | 70°C | 211 K |
| A64S9316G-70 | 70ns; operating current:35mA; standby current:10uA; 512K x 16bit low voltage super RAM | distributor | BGA | 48 | 0°C | 70°C | 172 K |
| A64S9316G-85 | 85ns; operating current:30mA; standby current:10uA; 512K x 16bit low voltage super RAM | distributor | BGA | 48 | 0°C | 70°C | 172 K |
| LNG316GFG | Square Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 32 K |
| MGF4316G | Super low noise InGaAs HEMT | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 33 K |
| UPD75316GF(A)-XXX-3B9 | 4-bit single-chip microcomputer | NEC-Electronics-Inc- | - | - | - | - | 577 K |
| UPD75316GF-XXX-3B9 | 4-bit single-chip microcomputer | NEC-Electronics-Inc- | - | - | - | - | 577 K |
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