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3181p

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
A65H83181P-52.5ns; 256K x 18 late write synchronous fast SRAMdistributorBGA260°C70°C530 K
A65H83181P-52.5ns; 30mA 256K x 18 late write synchronous fast SRAM with pipelined data outputdistributorBGA-0°C70°C530 K
A65H83181P-63.0ns; 256K x 18 late write synchronous fast SRAMdistributorBGA260°C70°C530 K
A65H83181P-62.5ns; 30mA 256K x 18 late write synchronous fast SRAM with pipelined data outputdistributorBGA-0°C70°C530 K
A65H83181P-73.5ns; 256K x 18 late write synchronous fast SRAMdistributorBGA260°C70°C530 K
A65H83181P-72.5ns; 30mA 256K x 18 late write synchronous fast SRAM with pipelined data outputdistributorBGA-0°C70°C530 K
MC33181PLow power, high slew rate, jfet input operational amplifierMotorolaPDIP8-40°C85°C235 K
MC33181PLow Power, High Slew Rate, Wide Bandwidth, JFET Input Op AmpON-SemiconductorPDIP8--235 K
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