Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HYM321000GS-50 | 1M x 32bit DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 80 K |
HYM321000GS-60 | 1M x 32bit DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 80 K |
HYM321000S-50 | 1M x 32bit DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 80 K |
HYM321000S-60 | 1M x 32bit DRAM module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 80 K |
NE3210S01-T1B | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 62 K |
TISP3210H3SL | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | SL | - | - | - | 231 K |
UPC3210TB | Reduced noise wide band amplifier | NEC-Electronics-Inc- | - | - | - | - | 87 K |
UPC3210TB-E3 | Reduced noise wide band amplifier | NEC-Electronics-Inc- | - | - | - | - | 87 K |
UPD63210GT | 16-bit D/A converter for digital audio | NEC-Electronics-Inc- | - | - | - | - | 141 K |
UPD63210LGT | 16-bit D/A converter for digital audio | NEC-Electronics-Inc- | - | - | - | - | 141 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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