| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HUF75333G3 | Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C | Fairchild-Semiconductor | - | - | - | - | 292 K |
| HUF75333G3 | 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs | Intersil-Corporation | - | - | - | - | 108 K |
| HUFA75333G3 | 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 234 K |
| LM8333GGR8
| Mobile I/O Companion Supporting Key-Scan, I/O Expansion, PWM, and ACCESS.bus Host Interface | distributor | - | | - | - | 626 K |
| LM8333GGR8X
| Mobile I/O Companion Supporting Key-Scan, I/O Expansion, PWM, and ACCESS.bus Host Interface | distributor | - | | - | - | 626 K |
| LNG333GFG | Square Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 32 K |
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