| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQA33N10 | 100V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 566 K |
| FQA33N10L | 100V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 642 K |
| FQAF33N10 | 100V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 571 K |
| FQAF33N10L | 100V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 647 K |
| MTB33N10E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 266 K |
| MTP33N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 240 K |
| MTW33N10E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 227 K |
| PHP33N10 | PowerMOS transistor | Philips-Semiconductors | - | - | - | - | 73 K |
| STP33N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP33N10FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
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