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33N10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQA33N10100V N-Channel MOSFETFairchild-Semiconductor----566 K
FQA33N10L100V LOGIC N-Channel MOSFETFairchild-Semiconductor----642 K
FQAF33N10100V N-Channel MOSFETFairchild-Semiconductor----571 K
FQAF33N10L100V LOGIC N-Channel MOSFETFairchild-Semiconductor----647 K
MTB33N10ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C266 K
MTP33N10ETMOS E-FET power field effect transistorMotorola-4-55°C150°C240 K
MTW33N10ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C227 K
PHP33N10PowerMOS transistorPhilips-Semiconductors----73 K
STP33N10N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----199 K
STP33N10FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----199 K
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