| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM3502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load 35A. Non-repetive peak forward surge current at rated load 400A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CM3502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load 35A. Non-repetive peak forward surge current at rated load 400A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CP3502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load at Tc=55degC 35A. | distributor | - | 4 | -55°C | 150°C | 68 K |
| GBPC3502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 35 A. | distributor | GBPC | 4 | -50°C | 150°C | 38 K |
| GBPC3502 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 35 A. | distributor | GBPC | 4 | -50°C | 150°C | 38 K |
| GBPC3502W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 35 A. | distributor | - | 4 | -50°C | 150°C | 40 K |
| GBPC3502W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 35 A. | distributor | - | 4 | -50°C | 150°C | 40 K |
| GL3502 | In-line high current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 35 A. | distributor | GL | 4 | -50°C | 150°C | 46 K |
| RBV3502 | 200 V, 35 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 18 K |
| TC55RP3502ECB | Low dropout positive voltage rgulator. Output voltage 3.5V . Tolerance +-2%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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