Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N3673 | Silicon power rectifier | Diotec-Elektronische | - | 2 | -65°C | 175°C | 35 K |
1N3673 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 129 K |
1N3673A | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 106 K |
1N3673AR | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | - | - | - | - | 106 K |
JAN1N3673A | 12A silicon power rectifier, 1000V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
JANTX1N3673A | 12A silicon power rectifier, 1000V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
JANTX1N3673RA | 12A silicon power rectifier, 1000V | Microsemi-Corporation | DO4 | 2 | -65°C | 150°C | 106 K |
TDA3673 | Low dropout voltage/quiescent current 3.3 V voltage regulator with enable | Philips-Semiconductors | - | - | - | - | 83 K |
TDA3673AT | Very low dropout voltage/quiescent current 3.3V voltage regulator with enable | Philips-Semiconductors | SO | 8 | -40°C | 125°C | 92 K |
TDA3673T | 33 V, very low dropout voltage/quiescent current 3.3 V voltage regulator | Philips-Semiconductors | SO | 8 | -40°C | 150°C | 83 K |
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