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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB36N06ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C278 K
MTB36N06VTMOS V power field effect transistorMotorolaDPAK4-55°C175°C241 K
MTP36N06VTMOS V power field effect transistorMotorola-4-55°C175°C188 K
PHB36N06E60 V, power MOS transistorPhilips-SemiconductorsSOT3--55 K
PHB36N06E60 V, power MOS transistorPhilips-SemiconductorsSOT3--55 K
STP36N05LN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----204 K
STP36N05LFIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----204 K
STP36N06N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----201 K
STP36N06FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----201 K
STP36N06LN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----204 K
STP36N06LFIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----204 K
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