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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF3710HEXFET power MOSFET. VDSS = 100V, RDS(on) = 23 mOhm, ID = 57AInternational-Rectifier-3-55°C175°C94 K
IRF3710LHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57AInternational-Rectifier-3-55°C175°C184 K
IRF3710SHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57AInternational-RectifierDDPak3-55°C175°C184 K
IRF3710SHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57AInternational-RectifierDDPak3-55°C175°C184 K
IRF5M3710HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.03 Ohm, ID = 35AInternational-Rectifier-3-55°C150°C114 K
IRF5N3710HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.028 Ohm, ID = 45AInternational-Rectifier-3-55°C150°C116 K
IRF5Y3710CMHEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.035 Ohm, ID = 18AInternational-Rectifier-3-55°C150°C105 K
IRFP3710HEXFET power MOSFET. VDSS = 100 V, RDS(on) = 0.025 W, ID = 57 AInternational-Rectifier-3-55°C175°C185 K
R37100Standard Rectifier (trr more than 500ns)Microsemi-Corporation----133 K
S37100Standard Rectifier (trr more than 500ns)Microsemi-Corporation----133 K
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